Vishay Semiconductor Diodes Division - UGF8JT-E3/45

KEY Part #: K6455882

UGF8JT-E3/45 Pricing (USD) [53747PC Stock]

  • 1 pcs$0.72749
  • 1,000 pcs$0.30691

Nimewo Pati:
UGF8JT-E3/45
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 600V 8A ITO220AC. Rectifiers 600 Volt 8.0A 25ns 100 Amp IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - JFETs, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - RF and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division UGF8JT-E3/45 electronic components. UGF8JT-E3/45 can be shipped within 24 hours after order. If you have any demands for UGF8JT-E3/45, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UGF8JT-E3/45 Atribi pwodwi yo

Nimewo Pati : UGF8JT-E3/45
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 600V 8A ITO220AC
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 8A
Voltage - Forward (Vf) (Max) @ Si : 1.75V @ 8A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 50ns
Kouran - Fèy Reverse @ Vr : 30µA @ 600V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : TO-220-2 Full Pack, Isolated Tab
Pake Aparèy Founisè : ITO-220AC
Operating Tanperati - Junction : -55°C ~ 150°C

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