DMN2011UTS-13 Pricing (USD) [404049PC Stock]
- 1 pcs$0.09154
- Nimewo Pati:
- DMN2011UTS-13
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 20V 21A 8-TSSOP.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single, Diodes - Zener - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - RF and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN2011UTS-13 electronic components. DMN2011UTS-13 can be shipped within 24 hours after order. If you have any demands for DMN2011UTS-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2011UTS-13 Atribi pwodwi yo
Nimewo Pati :
DMN2011UTS-13
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 20V 21A 8-TSSOP
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
21A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.5V, 4.5V
RD sou (Max) @ Id, Vgs :
11 mOhm @ 7A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
56nC @ 10V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
2248pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.3W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-TSSOP
Pake / Ka :
8-TSSOP (0.173", 4.40mm Width)
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