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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. GA20SICP12-247

GeneSiC Semiconductor - GA20SICP12-247

KEY Part #: K6412389

GA20SICP12-247 Pricing (USD) [13463PC Stock]

  • 250 pcs$19.67285
Nimewo Pati:
GA20SICP12-247
Manifakti:
GeneSiC Semiconductor
Detaye deskripsyon:
TRANS SJT 1200V 45A TO247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - RF and Tiristors - TRIACs ...
Avantaj konpetitif:
We specialize in GeneSiC Semiconductor GA20SICP12-247 electronic components. GA20SICP12-247 can be shipped within 24 hours after order. If you have any demands for GA20SICP12-247, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GA20SICP12-247 Atribi pwodwi yo

Nimewo Pati : GA20SICP12-247
Manifakti : GeneSiC Semiconductor
Deskripsyon : TRANS SJT 1200V 45A TO247
Seri : -
Estati Pati : Obsolete
FET Kalite : -
Teknoloji : SiC (Silicon Carbide Junction Transistor)
Drenaj nan Voltage Sous (Vdss) : 1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 45A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : -
RD sou (Max) @ Id, Vgs : 50 mOhm @ 20A
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Antre kapasite (Ciss) (Max) @ Vds : 3091pF @ 800V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 282W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247AB
Pake / Ka : TO-247-3
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