IPP041N12N3GXKSA1 Pricing (USD) [13572PC Stock]
- 1 pcs$3.03642
- Nimewo Pati:
- IPP041N12N3GXKSA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 120V 120A TO220-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Single, Diodes - Zener - Arrays, Transistors - Pwogramasyon Unijunction, Modil pouvwa chofè, Diodes - RF and Transistors - Bipolè (BJT) - Single ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPP041N12N3GXKSA1 electronic components. IPP041N12N3GXKSA1 can be shipped within 24 hours after order. If you have any demands for IPP041N12N3GXKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP041N12N3GXKSA1 Atribi pwodwi yo
Nimewo Pati :
IPP041N12N3GXKSA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 120V 120A TO220-3
Seri :
OptiMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
120V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
4.1 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
4V @ 270µA
Chaje Gate (Qg) (Max) @ Vgs :
211nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
13800pF @ 60V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
300W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
PG-TO220-3
Pake / Ka :
TO-220-3
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