SQ1470AEH-T1_GE3 Pricing (USD) [431769PC Stock]
- 1 pcs$0.08567
- 3,000 pcs$0.07283
- Nimewo Pati:
- SQ1470AEH-T1_GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET N-CH 30V 2.8A SC70.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - RF, Diodes - RF, Transistors - Bipolè (BJT) - Single, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Arrays and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SQ1470AEH-T1_GE3 electronic components. SQ1470AEH-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ1470AEH-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQ1470AEH-T1_GE3 Atribi pwodwi yo
Nimewo Pati :
SQ1470AEH-T1_GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 30V 2.8A SC70
Seri :
Automotive, AEC-Q101, TrenchFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
1.7A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
2.5V, 4.5V
RD sou (Max) @ Id, Vgs :
65 mOhm @ 4.2A, 4.5V
Vgs (th) (Max) @ Id :
1.6V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
5.2nC @ 4.5V
Vgs (Max) :
±12V
Antre kapasite (Ciss) (Max) @ Vds :
450pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.3W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
SOT-363, SC70
Pake / Ka :
6-TSSOP, SC-88, SOT-363
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