BSH205G2R Pricing (USD) [898121PC Stock]
- 1 pcs$0.04118
- 3,000 pcs$0.03698
- Nimewo Pati:
- BSH205G2R
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET P-CH 20V 2A SOT23.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Arrays, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Single, Tiristors - SCR, Transistors - FETs, MOSFETs - Single and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. BSH205G2R electronic components. BSH205G2R can be shipped within 24 hours after order. If you have any demands for BSH205G2R, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSH205G2R Atribi pwodwi yo
Nimewo Pati :
BSH205G2R
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET P-CH 20V 2A SOT23
Seri :
-
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V
RD sou (Max) @ Id, Vgs :
170 mOhm @ 2A, 4.5V
Vgs (th) (Max) @ Id :
950mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
6.5nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
418pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
480mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-236AB
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
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