DMN1032UCB4-7 Pricing (USD) [371913PC Stock]
- 1 pcs$0.09945
- 3,000 pcs$0.08901
- Nimewo Pati:
- DMN1032UCB4-7
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 12V 4.8A U-WLB1010-4.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN1032UCB4-7 electronic components. DMN1032UCB4-7 can be shipped within 24 hours after order. If you have any demands for DMN1032UCB4-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN1032UCB4-7 Atribi pwodwi yo
Nimewo Pati :
DMN1032UCB4-7
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 12V 4.8A U-WLB1010-4
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
4.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 4.5V
RD sou (Max) @ Id, Vgs :
26 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id :
1.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
4.5nC @ 4.5V
Vgs (Max) :
±8V
Antre kapasite (Ciss) (Max) @ Vds :
450pF @ 6V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
900mW (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
U-WLB1010-4
Pake / Ka :
4-UFBGA, WLBGA
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