Infineon Technologies - SPU09P06PL

KEY Part #: K6413930

[12930PC Stock]


    Nimewo Pati:
    SPU09P06PL
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    MOSFET P-CH 60V 9.7A TO-251.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - JFETs, Diodes - Bridge rèktifikateur, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR and Transistors - FETs, MOSFETs - RF ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies SPU09P06PL electronic components. SPU09P06PL can be shipped within 24 hours after order. If you have any demands for SPU09P06PL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SPU09P06PL Atribi pwodwi yo

    Nimewo Pati : SPU09P06PL
    Manifakti : Infineon Technologies
    Deskripsyon : MOSFET P-CH 60V 9.7A TO-251
    Seri : SIPMOS®
    Estati Pati : Obsolete
    FET Kalite : P-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 60V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9.7A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 250 mOhm @ 6.8A, 10V
    Vgs (th) (Max) @ Id : 2V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 21nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : 450pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 42W (Tc)
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : P-TO251-3-1
    Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA

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