CSD16321Q5C Pricing (USD) [12185PC Stock]
- 2,500 pcs$0.33388
- Nimewo Pati:
- CSD16321Q5C
- Manifakti:
- Texas Instruments
- Detaye deskripsyon:
- MOSFET N-CH 25V 100A 8SON.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Rèkteur - Arrays, Diodes - RF, Transistors - Bipolè (BJT) - Single and Diodes - Zener - Single ...
- Avantaj konpetitif:
- We specialize in Texas Instruments CSD16321Q5C electronic components. CSD16321Q5C can be shipped within 24 hours after order. If you have any demands for CSD16321Q5C, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD16321Q5C Atribi pwodwi yo
Nimewo Pati :
CSD16321Q5C
Manifakti :
Texas Instruments
Deskripsyon :
MOSFET N-CH 25V 100A 8SON
Seri :
NexFET™
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
31A (Ta), 100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
3V, 8V
RD sou (Max) @ Id, Vgs :
2.4 mOhm @ 25A, 8V
Vgs (th) (Max) @ Id :
1.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
19nC @ 4.5V
Vgs (Max) :
+10V, -8V
Antre kapasite (Ciss) (Max) @ Vds :
3100pF @ 12.5V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
3.1W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-VSON-CLIP (5x6)
Pake / Ka :
8-PowerTDFN
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