Diodes Incorporated - ZXMN4A06GTA

KEY Part #: K6419653

ZXMN4A06GTA Pricing (USD) [221619PC Stock]

  • 1 pcs$0.16690
  • 1,000 pcs$0.14618

Nimewo Pati:
ZXMN4A06GTA
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N-CH 40V 5A SOT223.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Modil yo, Diodes - Zener - Arrays, Transistors - IGBTs - Single, Diodes - Bridge rèktifikateur and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ZXMN4A06GTA Atribi pwodwi yo

Nimewo Pati : ZXMN4A06GTA
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N-CH 40V 5A SOT223
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 50 mOhm @ 4.5A, 10V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 18.2nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 770pF @ 40V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-223
Pake / Ka : TO-261-4, TO-261AA