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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FQU9N25TU

ON Semiconductor - FQU9N25TU

KEY Part #: K6418423

FQU9N25TU Pricing (USD) [63190PC Stock]

  • 1 pcs$0.61879
  • 5,040 pcs$0.25153
Nimewo Pati:
FQU9N25TU
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 250V 7.4A IPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - FETs, MOSFETs - RF, Diodes - Rèkteur - Single, Modil pouvwa chofè, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Arrays and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
We specialize in ON Semiconductor FQU9N25TU electronic components. FQU9N25TU can be shipped within 24 hours after order. If you have any demands for FQU9N25TU, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQU9N25TU Atribi pwodwi yo

Nimewo Pati : FQU9N25TU
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 250V 7.4A IPAK
Seri : QFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 250V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7.4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 420 mOhm @ 3.7A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 700pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta), 55W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : I-PAK
Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA

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