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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. APT14M100S

Microsemi Corporation - APT14M100S

KEY Part #: K6403801

APT14M100S Pricing (USD) [2232PC Stock]

  • 65 pcs$3.95328
Nimewo Pati:
APT14M100S
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
MOSFET N-CH 1000V 14A D3PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Tiristors - SCR, Transistors - JFETs, Tiristors - TRIACs, Modil pouvwa chofè, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Single and Transistors - Objektif espesyal ...
Avantaj konpetitif:
We specialize in Microsemi Corporation APT14M100S electronic components. APT14M100S can be shipped within 24 hours after order. If you have any demands for APT14M100S, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT14M100S Atribi pwodwi yo

Nimewo Pati : APT14M100S
Manifakti : Microsemi Corporation
Deskripsyon : MOSFET N-CH 1000V 14A D3PAK
Seri : POWER MOS 8™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 1000V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 14A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 880 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id : 5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 120nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 3965pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 500W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D3Pak
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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