CSD18513Q5A Pricing (USD) [197844PC Stock]
- 1 pcs$0.19955
- 2,500 pcs$0.19856
- Nimewo Pati:
- CSD18513Q5A
- Manifakti:
- Texas Instruments
- Detaye deskripsyon:
- 40V N CH MOSFET.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR - Modil yo, Modil pouvwa chofè, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - RF and Transistors - Pwogramasyon Unijunction ...
- Avantaj konpetitif:
- We specialize in Texas Instruments CSD18513Q5A electronic components. CSD18513Q5A can be shipped within 24 hours after order. If you have any demands for CSD18513Q5A, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD18513Q5A Atribi pwodwi yo
Nimewo Pati :
CSD18513Q5A
Manifakti :
Texas Instruments
Deskripsyon :
40V N CH MOSFET
Seri :
NexFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
124A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
5.3 mOhm @ 19A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
61nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
4280pF @ 20V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
96W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
8-VSONP (5x6)
Pake / Ka :
8-PowerTDFN
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