Infineon Technologies - BSC030N08NS5ATMA1

KEY Part #: K6419159

BSC030N08NS5ATMA1 Pricing (USD) [95125PC Stock]

  • 1 pcs$0.41105
  • 5,000 pcs$0.39460

Nimewo Pati:
BSC030N08NS5ATMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 80V 100A 8TDSON.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - Objektif espesyal, Transistors - Pwogramasyon Unijunction, Modil pouvwa chofè, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - JFETs ...
Avantaj konpetitif:
We specialize in Infineon Technologies BSC030N08NS5ATMA1 electronic components. BSC030N08NS5ATMA1 can be shipped within 24 hours after order. If you have any demands for BSC030N08NS5ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSC030N08NS5ATMA1 Atribi pwodwi yo

Nimewo Pati : BSC030N08NS5ATMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 80V 100A 8TDSON
Seri : OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V
RD sou (Max) @ Id, Vgs : 3 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id : 3.8V @ 95µA
Chaje Gate (Qg) (Max) @ Vgs : 76nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 5600pF @ 40V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta), 139W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-TDSON-8
Pake / Ka : 8-PowerTDFN