Infineon Technologies - IRFS4010TRLPBF

KEY Part #: K6417529

IRFS4010TRLPBF Pricing (USD) [33940PC Stock]

  • 1 pcs$1.21430
  • 800 pcs$0.82790

Nimewo Pati:
IRFS4010TRLPBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 100V 180A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Objektif espesyal, Transistors - IGBTs - Modil yo, Transistors - IGBTs - Arrays, Tiristors - SCR - Modil yo, Diodes - RF and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRFS4010TRLPBF electronic components. IRFS4010TRLPBF can be shipped within 24 hours after order. If you have any demands for IRFS4010TRLPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFS4010TRLPBF Atribi pwodwi yo

Nimewo Pati : IRFS4010TRLPBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 100V 180A D2PAK
Seri : HEXFET®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 180A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 4.7 mOhm @ 106A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 215nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 9575pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 375W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D2PAK
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB