Diodes Incorporated - DMT6016LFDF-7

KEY Part #: K6418216

DMT6016LFDF-7 Pricing (USD) [377634PC Stock]

  • 1 pcs$0.09795
  • 3,000 pcs$0.08766

Nimewo Pati:
DMT6016LFDF-7
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
MOSFET N-CH 60V 8.9A 6UDFN.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Arrays, Tiristors - SCR, Diodes - Bridge rèktifikateur and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in Diodes Incorporated DMT6016LFDF-7 electronic components. DMT6016LFDF-7 can be shipped within 24 hours after order. If you have any demands for DMT6016LFDF-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMT6016LFDF-7 Atribi pwodwi yo

Nimewo Pati : DMT6016LFDF-7
Manifakti : Diodes Incorporated
Deskripsyon : MOSFET N-CH 60V 8.9A 6UDFN
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8.9A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 16 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 17nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 864pF @ 30V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 820mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 6-UDFN (2x2)
Pake / Ka : 6-UDFN Exposed Pad