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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FDFS6N548

ON Semiconductor - FDFS6N548

KEY Part #: K6415773

FDFS6N548 Pricing (USD) [157969PC Stock]

  • 1 pcs$0.23414
  • 2,500 pcs$0.23114
Nimewo Pati:
FDFS6N548
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 30V 7A 8-SOIC.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Pwogramasyon Unijunction, Tiristors - SCR - Modil yo, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Arrays, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Single and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
We specialize in ON Semiconductor FDFS6N548 electronic components. FDFS6N548 can be shipped within 24 hours after order. If you have any demands for FDFS6N548, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDFS6N548 Atribi pwodwi yo

Nimewo Pati : FDFS6N548
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 30V 7A 8-SOIC
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 23 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 13nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 700pF @ 15V
Karakteristik FET : Schottky Diode (Isolated)
Disipasyon Pouvwa (Max) : 1.6W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-SOIC
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

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