Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET 2N-CH 20V 9.6A BGA
FET Kalite :
2 N-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
9.6A
RD sou (Max) @ Id, Vgs :
14 mOhm @ 9.6A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
17nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
1299pF @ 10V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
18-BGA (2.5x4)