Infineon Technologies - IRG7CH37K10EF

KEY Part #: K6421862

IRG7CH37K10EF Pricing (USD) [43035PC Stock]

  • 1 pcs$1.90382

Nimewo Pati:
IRG7CH37K10EF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
IGBT CHIP WAFER.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Diodes - Zener - Single, Tiristors - TRIACs and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRG7CH37K10EF electronic components. IRG7CH37K10EF can be shipped within 24 hours after order. If you have any demands for IRG7CH37K10EF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRG7CH37K10EF Atribi pwodwi yo

Nimewo Pati : IRG7CH37K10EF
Manifakti : Infineon Technologies
Deskripsyon : IGBT CHIP WAFER
Seri : -
Estati Pati : Active
Kalite IGBT : -
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 15A
Kouran - Pèseptè batman (Icm) : -
Vce (sou) (Max) @ Vge, Ic : 2.3V @ 15V, 15A
Pouvwa - Max : -
Oblije chanje enèji : -
Kalite Antre : Standard
Gate chaje : 80nC
Td (on / off) @ 25 ° C : 28ns/122ns
Kondisyon egzamen an : 600V, 15A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : -
Operating Tanperati : -40°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : Die
Pake Aparèy Founisè : Die