Infineon Technologies - IRFS4227PBF

KEY Part #: K6408350

IRFS4227PBF Pricing (USD) [8585PC Stock]

  • 1 pcs$1.54686
  • 10 pcs$1.38159
  • 100 pcs$1.07481
  • 500 pcs$0.87033
  • 1,000 pcs$0.73402

Nimewo Pati:
IRFS4227PBF
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 200V 62A D2PAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Objektif espesyal, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Single, Diodes - RF, Tiristors - SCR, Transistors - IGBTs - Arrays and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in Infineon Technologies IRFS4227PBF electronic components. IRFS4227PBF can be shipped within 24 hours after order. If you have any demands for IRFS4227PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFS4227PBF Atribi pwodwi yo

Nimewo Pati : IRFS4227PBF
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 200V 62A D2PAK
Seri : HEXFET®
Estati Pati : Discontinued at Digi-Key
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 62A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 26 mOhm @ 46A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 98nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 4600pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 330W (Tc)
Operating Tanperati : -40°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : D2PAK
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB