ON Semiconductor - NTLGF3501NT2G

KEY Part #: K6420504

NTLGF3501NT2G Pricing (USD) [202426PC Stock]

  • 1 pcs$0.18363
  • 3,000 pcs$0.18272

Nimewo Pati:
NTLGF3501NT2G
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 20V 2.8A 6-DFN.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - Pwogramasyon Unijunction, Modil pouvwa chofè, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modil yo and Transistors - FETs, MOSFETs - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTLGF3501NT2G Atribi pwodwi yo

Nimewo Pati : NTLGF3501NT2G
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 20V 2.8A 6-DFN
Seri : FETKY™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
RD sou (Max) @ Id, Vgs : 90 mOhm @ 3.4A, 4.5V
Vgs (th) (Max) @ Id : 2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 10nC @ 4.5V
Vgs (Max) : ±12V
Antre kapasite (Ciss) (Max) @ Vds : 275pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.14W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 6-DFN (3x3)
Pake / Ka : 6-VDFN Exposed Pad

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