[2469PC Stock]
- Nimewo Pati:
- PMG45UN,115
- Manifakti:
- NXP USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 20V 3A SOT363.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Single, Tiristors - DIACs, SIDACs, Transistors - Pwogramasyon Unijunction, Diodes - RF, Diodes - Zener - Arrays, Tiristors - TRIACs and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in NXP USA Inc. PMG45UN,115 electronic components. PMG45UN,115 can be shipped within 24 hours after order. If you have any demands for PMG45UN,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMG45UN,115 Atribi pwodwi yo
Nimewo Pati :
PMG45UN,115
Manifakti :
NXP USA Inc.
Deskripsyon :
MOSFET N-CH 20V 3A SOT363
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
55 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
3.3nC @ 4.5V
Vgs (Max) :
-
Antre kapasite (Ciss) (Max) @ Vds :
184pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
375mW (Ta), 4.35W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
6-TSSOP
Pake / Ka :
6-TSSOP, SC-88, SOT-363
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