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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Arrays
  5. FDR8305N

ON Semiconductor - FDR8305N

KEY Part #: K6524605

[3775PC Stock]

    Nimewo Pati:
    FDR8305N
    Manifakti:
    ON Semiconductor
    Detaye deskripsyon:
    MOSFET 2N-CH 20V 4.5A SSOT-8.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Modil pouvwa chofè, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF and Diodes - Varyab kapasite (Varicaps, Varactors) ...
    Avantaj konpetitif:
    We specialize in ON Semiconductor FDR8305N electronic components. FDR8305N can be shipped within 24 hours after order. If you have any demands for FDR8305N, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FDR8305N Atribi pwodwi yo

    Nimewo Pati : FDR8305N
    Manifakti : ON Semiconductor
    Deskripsyon : MOSFET 2N-CH 20V 4.5A SSOT-8
    Seri : PowerTrench®
    Estati Pati : Obsolete
    FET Kalite : 2 N-Channel (Dual)
    Karakteristik FET : Logic Level Gate
    Drenaj nan Voltage Sous (Vdss) : 20V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.5A
    RD sou (Max) @ Id, Vgs : 22 mOhm @ 4.5A, 4.5V
    Vgs (th) (Max) @ Id : 1.5V @ 250µA
    Chaje Gate (Qg) (Max) @ Vgs : 23nC @ 4.5V
    Antre kapasite (Ciss) (Max) @ Vds : 1600pF @ 10V
    Pouvwa - Max : 800mW
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : 8-LSOP (0.130", 3.30mm Width)
    Pake Aparèy Founisè : SuperSOT™-8

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