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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. FCP190N65S3R0

ON Semiconductor - FCP190N65S3R0

KEY Part #: K6397396

FCP190N65S3R0 Pricing (USD) [65548PC Stock]

  • 1 pcs$0.59652
Nimewo Pati:
FCP190N65S3R0
Manifakti:
ON Semiconductor
Detaye deskripsyon:
MOSFET N-CH 650V 190MOHM TO220 I.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Single, Transistors - Pwogramasyon Unijunction, Transistors - IGBTs - Single, Transistors - Objektif espesyal and Diodes - Rèkteur - Arrays ...
Avantaj konpetitif:
We specialize in ON Semiconductor FCP190N65S3R0 electronic components. FCP190N65S3R0 can be shipped within 24 hours after order. If you have any demands for FCP190N65S3R0, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FCP190N65S3R0 Atribi pwodwi yo

Nimewo Pati : FCP190N65S3R0
Manifakti : ON Semiconductor
Deskripsyon : MOSFET N-CH 650V 190MOHM TO220 I
Seri : SuperFET® III
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 17A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 190 mOhm @ 8.5A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 1.7mA
Chaje Gate (Qg) (Max) @ Vgs : 33nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 1350pF @ 400V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 144W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220-3
Pake / Ka : TO-220-3

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