IXFN73N30Q Pricing (USD) [3592PC Stock]
- 1 pcs$12.72576
- 10 pcs$12.66245
- Nimewo Pati:
- IXFN73N30Q
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 300V 73A SOT-227B.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - IGBTs - Modil yo, Tiristors - DIACs, SIDACs, Transistors - JFETs, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Tiristors - TRIACs and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in IXYS IXFN73N30Q electronic components. IXFN73N30Q can be shipped within 24 hours after order. If you have any demands for IXFN73N30Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFN73N30Q Atribi pwodwi yo
Nimewo Pati :
IXFN73N30Q
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 300V 73A SOT-227B
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
300V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
73A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
45 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs :
195nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
5400pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
481W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SOT-227B
Pake / Ka :
SOT-227-4, miniBLOC
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