CSD19533KCS Pricing (USD) [56337PC Stock]
- 1 pcs$0.76512
- 10 pcs$0.69154
- 100 pcs$0.55570
- 500 pcs$0.43220
- 1,000 pcs$0.33875
- Nimewo Pati:
- CSD19533KCS
- Manifakti:
- Texas Instruments
- Detaye deskripsyon:
- MOSFET N-CH 100V 86A TO220-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - Pwogramasyon Unijunction, Diodes - Rèkteur - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single and Tiristors - DIACs, SIDACs ...
- Avantaj konpetitif:
- We specialize in Texas Instruments CSD19533KCS electronic components. CSD19533KCS can be shipped within 24 hours after order. If you have any demands for CSD19533KCS, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD19533KCS Atribi pwodwi yo
Nimewo Pati :
CSD19533KCS
Manifakti :
Texas Instruments
Deskripsyon :
MOSFET N-CH 100V 86A TO220-3
Seri :
NexFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
100A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
6V, 10V
RD sou (Max) @ Id, Vgs :
10.5 mOhm @ 55A, 10V
Vgs (th) (Max) @ Id :
3.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
35nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
2670pF @ 50V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
188W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220-3
Pake / Ka :
TO-220-3
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