EPC - EPC2107ENGRT

KEY Part #: K6525173

EPC2107ENGRT Pricing (USD) [107742PC Stock]

  • 1 pcs$0.37254
  • 5,000 pcs$0.37069

Nimewo Pati:
EPC2107ENGRT
Manifakti:
EPC
Detaye deskripsyon:
GAN TRANS 3N-CH 100V BUMPED DIE.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - JFETs, Tiristors - SCR - Modil yo, Diodes - RF, Transistors - Pwogramasyon Unijunction, Modil pouvwa chofè, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
Avantaj konpetitif:
We specialize in EPC EPC2107ENGRT electronic components. EPC2107ENGRT can be shipped within 24 hours after order. If you have any demands for EPC2107ENGRT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EPC2107ENGRT Atribi pwodwi yo

Nimewo Pati : EPC2107ENGRT
Manifakti : EPC
Deskripsyon : GAN TRANS 3N-CH 100V BUMPED DIE
Seri : eGaN®
Estati Pati : Active
FET Kalite : 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Karakteristik FET : GaNFET (Gallium Nitride)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.7A, 500mA
RD sou (Max) @ Id, Vgs : 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
Vgs (th) (Max) @ Id : 2.5V @ 100µA, 2.5V @ 20µA
Chaje Gate (Qg) (Max) @ Vgs : 0.16nC @ 5V, 0.044nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds : 16pF @ 50V, 7pF @ 50V
Pouvwa - Max : -
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 9-VFBGA
Pake Aparèy Founisè : 9-BGA (1.35x1.35)