Toshiba Semiconductor and Storage - SSM6J505NU,LF

KEY Part #: K6421434

SSM6J505NU,LF Pricing (USD) [548511PC Stock]

  • 1 pcs$0.09510
  • 3,000 pcs$0.09462

Nimewo Pati:
SSM6J505NU,LF
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
MOSFET P CH 12V 12A UDFN6B.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Tiristors - TRIACs, Transistors - Objektif espesyal, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Single, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - Arrays and Diodes - Zener - Arrays ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM6J505NU,LF Atribi pwodwi yo

Nimewo Pati : SSM6J505NU,LF
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET P CH 12V 12A UDFN6B
Seri : U-MOSVI
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.2V, 4.5V
RD sou (Max) @ Id, Vgs : 12 mOhm @ 4A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 37.6nC @ 4.5V
Vgs (Max) : ±6V
Antre kapasite (Ciss) (Max) @ Vds : 2700pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.25W (Ta)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 6-UDFNB (2x2)
Pake / Ka : 6-WDFN Exposed Pad