R6003KND3TL1 Pricing (USD) [142190PC Stock]
- 1 pcs$0.26013
- Nimewo Pati:
- R6003KND3TL1
- Manifakti:
- Rohm Semiconductor
- Detaye deskripsyon:
- MOSFET LOW ON-RESISTANCE AND FAS.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Diodes - Zener - Single, Transistors - Bipolè (BJT) - Single, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Single and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Rohm Semiconductor R6003KND3TL1 electronic components. R6003KND3TL1 can be shipped within 24 hours after order. If you have any demands for R6003KND3TL1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
R6003KND3TL1 Atribi pwodwi yo
Nimewo Pati :
R6003KND3TL1
Manifakti :
Rohm Semiconductor
Deskripsyon :
MOSFET LOW ON-RESISTANCE AND FAS
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
3A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.5 Ohm @ 1A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
8nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
185pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
44W (Tc)
Operating Tanperati :
150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-252
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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