Nexperia USA Inc. - PSMN1R6-30MLHX

KEY Part #: K6420271

PSMN1R6-30MLHX Pricing (USD) [177123PC Stock]

  • 1 pcs$0.20882

Nimewo Pati:
PSMN1R6-30MLHX
Manifakti:
Nexperia USA Inc.
Detaye deskripsyon:
PSMN1R6-30MLH/SOT1210/MLFPAK.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - Rèkteur - Arrays, Diodes - Rèkteur - Single, Tiristors - TRIACs and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
We specialize in Nexperia USA Inc. PSMN1R6-30MLHX electronic components. PSMN1R6-30MLHX can be shipped within 24 hours after order. If you have any demands for PSMN1R6-30MLHX, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PSMN1R6-30MLHX Atribi pwodwi yo

Nimewo Pati : PSMN1R6-30MLHX
Manifakti : Nexperia USA Inc.
Deskripsyon : PSMN1R6-30MLH/SOT1210/MLFPAK
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 160A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 1.9 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 41nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2.369nF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 106W (Ta)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : LFPAK33
Pake / Ka : SOT-1210, 8-LFPAK33