Nimewo Pati :
IPB47N10SL26ATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 100V 47A TO263-3
Estati Pati :
Not For New Designs
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
47A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
26 mOhm @ 33A, 10V
Vgs (th) (Max) @ Id :
2V @ 2mA
Chaje Gate (Qg) (Max) @ Vgs :
135nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds :
2500pF @ 25V
Disipasyon Pouvwa (Max) :
175W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-TO263-3-2
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB