Infineon Technologies - IPB47N10SL26ATMA1

KEY Part #: K6419064

IPB47N10SL26ATMA1 Pricing (USD) [89681PC Stock]

  • 1 pcs$0.43600
  • 1,000 pcs$0.41519

Nimewo Pati:
IPB47N10SL26ATMA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
MOSFET N-CH 100V 47A TO263-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB47N10SL26ATMA1 Atribi pwodwi yo

Nimewo Pati : IPB47N10SL26ATMA1
Manifakti : Infineon Technologies
Deskripsyon : MOSFET N-CH 100V 47A TO263-3
Seri : SIPMOS®
Estati Pati : Not For New Designs
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 47A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 26 mOhm @ 33A, 10V
Vgs (th) (Max) @ Id : 2V @ 2mA
Chaje Gate (Qg) (Max) @ Vgs : 135nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2500pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 175W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PG-TO263-3-2
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB