Taiwan Semiconductor Corporation - TSM2309CX RFG

KEY Part #: K6418443

TSM2309CX RFG Pricing (USD) [882111PC Stock]

  • 1 pcs$0.04193

Nimewo Pati:
TSM2309CX RFG
Manifakti:
Taiwan Semiconductor Corporation
Detaye deskripsyon:
MOSFET P-CHANNEL 60V 3.1A SOT23.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Diodes - Rèkteur - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - IGBTs - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in Taiwan Semiconductor Corporation TSM2309CX RFG electronic components. TSM2309CX RFG can be shipped within 24 hours after order. If you have any demands for TSM2309CX RFG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TSM2309CX RFG Atribi pwodwi yo

Nimewo Pati : TSM2309CX RFG
Manifakti : Taiwan Semiconductor Corporation
Deskripsyon : MOSFET P-CHANNEL 60V 3.1A SOT23
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.1A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 190 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 8.2nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 425pF @ 30V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.56W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-23
Pake / Ka : TO-236-3, SC-59, SOT-23-3

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