DMN90H8D5HCTI Pricing (USD) [75032PC Stock]
- 1 pcs$0.52112
- Nimewo Pati:
- DMN90H8D5HCTI
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- MOSFET N-CH 900V 2.5A ITO220AB.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Tiristors - SCR, Diodes - RF, Diodes - Bridge rèktifikateur, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated DMN90H8D5HCTI electronic components. DMN90H8D5HCTI can be shipped within 24 hours after order. If you have any demands for DMN90H8D5HCTI, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN90H8D5HCTI Atribi pwodwi yo
Nimewo Pati :
DMN90H8D5HCTI
Manifakti :
Diodes Incorporated
Deskripsyon :
MOSFET N-CH 900V 2.5A ITO220AB
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
900V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.5A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
7 Ohm @ 1A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
7.9nC @ 10V
Vgs (Max) :
±30V
Antre kapasite (Ciss) (Max) @ Vds :
470pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
30W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
ITO-220AB
Pake / Ka :
TO-220-3 Full Pack, Isolated Tab
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