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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. GA10JT12-263

GeneSiC Semiconductor - GA10JT12-263

KEY Part #: K6399113

GA10JT12-263 Pricing (USD) [4640PC Stock]

  • 1 pcs$10.16943
  • 10 pcs$9.24469
  • 25 pcs$8.55122
  • 100 pcs$7.47449
  • 250 pcs$6.81498
Nimewo Pati:
GA10JT12-263
Manifakti:
GeneSiC Semiconductor
Detaye deskripsyon:
TRANS SJT 1200V 25A.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Objektif espesyal, Transistors - IGBTs - Single, Transistors - Bipolè (BJT) - Arrays, Transistors - Pwogramasyon Unijunction, Transistors - JFETs, Diodes - Bridge rèktifikateur, Modil pouvwa chofè and Tranzistò - Bipolè (BJT) - Single, Pre-partial ...
Avantaj konpetitif:
We specialize in GeneSiC Semiconductor GA10JT12-263 electronic components. GA10JT12-263 can be shipped within 24 hours after order. If you have any demands for GA10JT12-263, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GA10JT12-263 Atribi pwodwi yo

Nimewo Pati : GA10JT12-263
Manifakti : GeneSiC Semiconductor
Deskripsyon : TRANS SJT 1200V 25A
Seri : -
Estati Pati : Active
FET Kalite : -
Teknoloji : SiC (Silicon Carbide Junction Transistor)
Drenaj nan Voltage Sous (Vdss) : 1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 25A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : -
RD sou (Max) @ Id, Vgs : 120 mOhm @ 10A
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : -
Antre kapasite (Ciss) (Max) @ Vds : 1403pF @ 800V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 170W (Tc)
Operating Tanperati : 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : -
Pake / Ka : -
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