GeneSiC Semiconductor - GA10JT12-263

KEY Part #: K6399113

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Nimewo Pati : GA10JT12-263

Manifakti : GeneSiC Semiconductor

Deskripsyon : TRANS SJT 1200V 25A

Seri : -

Estati Pati : Active

FET Kalite : -

Teknoloji : SiC (Silicon Carbide Junction Transistor)

Drenaj nan Voltage Sous (Vdss) : 1200V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 25A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : -

RD sou (Max) @ Id, Vgs : 120 mOhm @ 10A

Vgs (th) (Max) @ Id : -

Chaje Gate (Qg) (Max) @ Vgs : -

Vgs (Max) : -

Antre kapasite (Ciss) (Max) @ Vds : 1403pF @ 800V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 170W (Tc)

Operating Tanperati : 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : -

Pake / Ka : -

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