IXYS - IXFX32N50

KEY Part #: K6407005

IXFX32N50 Pricing (USD) [1123PC Stock]

  • 30 pcs$6.35680

Nimewo Pati:
IXFX32N50
Manifakti:
IXYS
Detaye deskripsyon:
MOSFET N-CH 500V 32A PLUS247.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - Objektif espesyal, Diodes - Rèkteur - Arrays, Diodes - Rèkteur - Single, Tiristors - SCR - Modil yo, Diodes - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in IXYS IXFX32N50 electronic components. IXFX32N50 can be shipped within 24 hours after order. If you have any demands for IXFX32N50, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFX32N50 Atribi pwodwi yo

Nimewo Pati : IXFX32N50
Manifakti : IXYS
Deskripsyon : MOSFET N-CH 500V 32A PLUS247
Seri : HiPerFET™
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 32A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 150 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 4V @ 4mA
Chaje Gate (Qg) (Max) @ Vgs : 300nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 5450pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 360W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : PLUS247™-3
Pake / Ka : TO-247-3