IXYS - FDM100-0045SP

KEY Part #: K6408903

[467PC Stock]


    Nimewo Pati:
    FDM100-0045SP
    Manifakti:
    IXYS
    Detaye deskripsyon:
    MOSFET N-CH 55V 100A I4-PAC-5.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Bridge rèktifikateur, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Arrays and Diodes - Zener - Arrays ...
    Avantaj konpetitif:
    We specialize in IXYS FDM100-0045SP electronic components. FDM100-0045SP can be shipped within 24 hours after order. If you have any demands for FDM100-0045SP, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    FDM100-0045SP Atribi pwodwi yo

    Nimewo Pati : FDM100-0045SP
    Manifakti : IXYS
    Deskripsyon : MOSFET N-CH 55V 100A I4-PAC-5
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 55V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
    RD sou (Max) @ Id, Vgs : 7.2 mOhm @ 80A, 10V
    Vgs (th) (Max) @ Id : 4V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : 100nC @ 10V
    Vgs (Max) : ±20V
    Antre kapasite (Ciss) (Max) @ Vds : -
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : -
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : ISOPLUS i4-PAC™
    Pake / Ka : i4-Pac™-5