GeneSiC Semiconductor - GA10SICP12-263

KEY Part #: K6394031

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Nimewo Pati : GA10SICP12-263

Manifakti : GeneSiC Semiconductor

Deskripsyon : TRANS SJT 1200V 25A TO263-7

Seri : -

Estati Pati : Active

FET Kalite : -

Teknoloji : SiC (Silicon Carbide Junction Transistor)

Drenaj nan Voltage Sous (Vdss) : 1200V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 25A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : -

RD sou (Max) @ Id, Vgs : 100 mOhm @ 10A

Vgs (th) (Max) @ Id : -

Chaje Gate (Qg) (Max) @ Vgs : -

Vgs (Max) : -

Antre kapasite (Ciss) (Max) @ Vds : 1403pF @ 800V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 170W (Tc)

Operating Tanperati : 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D2PAK (7-Lead)

Pake / Ka : TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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