Renesas Electronics America - 2SK1058-E

KEY Part #: K6410005

[86PC Stock]


    Nimewo Pati:
    2SK1058-E
    Manifakti:
    Renesas Electronics America
    Detaye deskripsyon:
    MOSFET N-CH 160V 7A TO-3P.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - RF, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Single, Transistors - FETs, MOSFETs - RF, Diodes - Bridge rèktifikateur and Tiristors - TRIACs ...
    Avantaj konpetitif:
    We specialize in Renesas Electronics America 2SK1058-E electronic components. 2SK1058-E can be shipped within 24 hours after order. If you have any demands for 2SK1058-E, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    2SK1058-E Atribi pwodwi yo

    Nimewo Pati : 2SK1058-E
    Manifakti : Renesas Electronics America
    Deskripsyon : MOSFET N-CH 160V 7A TO-3P
    Seri : -
    Estati Pati : Active
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 160V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7A (Ta)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : -
    RD sou (Max) @ Id, Vgs : -
    Vgs (th) (Max) @ Id : -
    Chaje Gate (Qg) (Max) @ Vgs : -
    Vgs (Max) : ±15V
    Antre kapasite (Ciss) (Max) @ Vds : 600pF @ 10V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 100W (Tc)
    Operating Tanperati : 150°C (TJ)
    Mounting Kalite : Through Hole
    Pake Aparèy Founisè : TO-3P
    Pake / Ka : TO-3P-3, SC-65-3