CSD25485F5T Pricing (USD) [349429PC Stock]
- 1 pcs$0.10585
- Nimewo Pati:
- CSD25485F5T
- Manifakti:
- Texas Instruments
- Detaye deskripsyon:
- CSD25485F5T.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Varyab kapasite (Varicaps, Varactors), Modil pouvwa chofè, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Transistors - JFETs, Tiristors - TRIACs and Transistors - FETs, MOSFETs - RF ...
- Avantaj konpetitif:
- We specialize in Texas Instruments CSD25485F5T electronic components. CSD25485F5T can be shipped within 24 hours after order. If you have any demands for CSD25485F5T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CSD25485F5T Atribi pwodwi yo
Nimewo Pati :
CSD25485F5T
Manifakti :
Texas Instruments
Deskripsyon :
CSD25485F5T
Seri :
FemtoFET™
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
5.3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
1.8V, 8V
RD sou (Max) @ Id, Vgs :
35 mOhm @ 900mA, 8V
Vgs (th) (Max) @ Id :
1.3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
3.5nC @ 4.5V
Vgs (Max) :
-12V
Antre kapasite (Ciss) (Max) @ Vds :
533pF @ 10V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.4W (Ta)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
3-PICOSTAR
Pake / Ka :
3-XFDFN
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