SISS27DN-T1-GE3 Pricing (USD) [258674PC Stock]
- 1 pcs$0.14299
- 3,000 pcs$0.13455
- Nimewo Pati:
- SISS27DN-T1-GE3
- Manifakti:
- Vishay Siliconix
- Detaye deskripsyon:
- MOSFET P-CH 30V 50A PPAK 1212-8S.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Diodes - Rèkteur - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Arrays, Transistors - IGBTs - Single, Diodes - Zener - Single and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Siliconix SISS27DN-T1-GE3 electronic components. SISS27DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISS27DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISS27DN-T1-GE3 Atribi pwodwi yo
Nimewo Pati :
SISS27DN-T1-GE3
Manifakti :
Vishay Siliconix
Deskripsyon :
MOSFET P-CH 30V 50A PPAK 1212-8S
Seri :
TrenchFET®
Estati Pati :
Active
FET Kalite :
P-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
50A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
5.6 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
140nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
5250pF @ 15V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
4.8W (Ta), 57W (Tc)
Operating Tanperati :
-50°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerPAK® 1212-8S (3.3x3.3)
Pake / Ka :
8-PowerVDFN
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