FQP13N10L Pricing (USD) [72496PC Stock]
- 1 pcs$0.44319
- 10 pcs$0.38883
- 100 pcs$0.28369
- 500 pcs$0.21013
- 1,000 pcs$0.16810
- Nimewo Pati:
- FQP13N10L
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET N-CH 100V 12.8A TO-220.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - IGBTs - Single, Tiristors - SCR - Modil yo, Transistors - IGBTs - Modil yo, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - SCR, Diodes - Bridge rèktifikateur and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor FQP13N10L electronic components. FQP13N10L can be shipped within 24 hours after order. If you have any demands for FQP13N10L, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQP13N10L Atribi pwodwi yo
Nimewo Pati :
FQP13N10L
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET N-CH 100V 12.8A TO-220
Seri :
QFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
12.8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V, 10V
RD sou (Max) @ Id, Vgs :
180 mOhm @ 6.4A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
12nC @ 5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
520pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
65W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220-3
Pake / Ka :
TO-220-3
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