NXP USA Inc. - PH1875L,115

KEY Part #: K6400114

[3510PC Stock]


    Nimewo Pati:
    PH1875L,115
    Manifakti:
    NXP USA Inc.
    Detaye deskripsyon:
    MOSFET N-CH 75V 45.8A LFPAK.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - RF, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Single, Diodes - Zener - Arrays and Tiristors - DIACs, SIDACs ...
    Avantaj konpetitif:
    We specialize in NXP USA Inc. PH1875L,115 electronic components. PH1875L,115 can be shipped within 24 hours after order. If you have any demands for PH1875L,115, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    PH1875L,115 Atribi pwodwi yo

    Nimewo Pati : PH1875L,115
    Manifakti : NXP USA Inc.
    Deskripsyon : MOSFET N-CH 75V 45.8A LFPAK
    Seri : -
    Estati Pati : Obsolete
    FET Kalite : N-Channel
    Teknoloji : MOSFET (Metal Oxide)
    Drenaj nan Voltage Sous (Vdss) : 75V
    Kouran - Drenaj Kontinye (Id) @ 25 ° C : 45.8A (Tc)
    Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
    RD sou (Max) @ Id, Vgs : 16.5 mOhm @ 20A, 10V
    Vgs (th) (Max) @ Id : 2V @ 1mA
    Chaje Gate (Qg) (Max) @ Vgs : 33.4nC @ 5V
    Vgs (Max) : ±15V
    Antre kapasite (Ciss) (Max) @ Vds : 2600pF @ 25V
    Karakteristik FET : -
    Disipasyon Pouvwa (Max) : 62.5W (Tc)
    Operating Tanperati : -55°C ~ 150°C (TJ)
    Mounting Kalite : Surface Mount
    Pake Aparèy Founisè : LFPAK56, Power-SO8
    Pake / Ka : SC-100, SOT-669