[9681PC Stock]
- Nimewo Pati:
- APT33GF120LRDQ2G
- Manifakti:
- Microsemi Corporation
- Detaye deskripsyon:
- IGBT 1200V 64A 357W TO264.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Diodes - Zener - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Rèkteur - Arrays, Transistors - JFETs, Tiristors - TRIACs, Diodes - Rèkteur - Single and Transistors - IGBTs - Modil yo ...
- Avantaj konpetitif:
- We specialize in Microsemi Corporation APT33GF120LRDQ2G electronic components. APT33GF120LRDQ2G can be shipped within 24 hours after order. If you have any demands for APT33GF120LRDQ2G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT33GF120LRDQ2G Atribi pwodwi yo
Nimewo Pati :
APT33GF120LRDQ2G
Manifakti :
Microsemi Corporation
Deskripsyon :
IGBT 1200V 64A 357W TO264
Seri :
-
Estati Pati :
Obsolete
Kalite IGBT :
NPT
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
64A
Kouran - Pèseptè batman (Icm) :
75A
Vce (sou) (Max) @ Vge, Ic :
3V @ 15V, 25A
Pouvwa - Max :
357W
Oblije chanje enèji :
1.315mJ (on), 1.515mJ (off)
Kalite Antre :
Standard
Gate chaje :
170nC
Td (on / off) @ 25 ° C :
14ns/185ns
Kondisyon egzamen an :
800V, 25A, 4.3 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-264-3, TO-264AA
Pake Aparèy Founisè :
TO-264 [L]
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