IXFH130N15X3 Pricing (USD) [14255PC Stock]
- 1 pcs$2.89099
- Nimewo Pati:
- IXFH130N15X3
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Transistors - JFETs, Tiristors - SCR - Modil yo, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - RF and Transistors - IGBTs - Arrays ...
- Avantaj konpetitif:
- We specialize in IXYS IXFH130N15X3 electronic components. IXFH130N15X3 can be shipped within 24 hours after order. If you have any demands for IXFH130N15X3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFH130N15X3 Atribi pwodwi yo
Nimewo Pati :
IXFH130N15X3
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH
Seri :
HiPerFET™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
150V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
130A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
9 mOhm @ 65A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 1.5mA
Chaje Gate (Qg) (Max) @ Vgs :
80nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
5230pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
390W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-247
Pake / Ka :
TO-247-3
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