IPN50R800CEATMA1 Pricing (USD) [342958PC Stock]
- 1 pcs$0.10785
- 3,000 pcs$0.08908
- Nimewo Pati:
- IPN50R800CEATMA1
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- CONSUMER.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Transistors - FETs, MOSFETs - Arrays, Modil pouvwa chofè, Transistors - Objektif espesyal, Transistors - JFETs, Diodes - Zener - Single, Diodes - Zener - Arrays and Transistors - Bipolè (BJT) - Arrays ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IPN50R800CEATMA1 electronic components. IPN50R800CEATMA1 can be shipped within 24 hours after order. If you have any demands for IPN50R800CEATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPN50R800CEATMA1 Atribi pwodwi yo
Nimewo Pati :
IPN50R800CEATMA1
Manifakti :
Infineon Technologies
Deskripsyon :
CONSUMER
Seri :
CoolMOS™ CE
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
7.6A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
13V
RD sou (Max) @ Id, Vgs :
800 mOhm @ 1.5A, 13V
Vgs (th) (Max) @ Id :
3.5V @ 130µA
Chaje Gate (Qg) (Max) @ Vgs :
12.4nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
280pF @ 100V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
5W (Tc)
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-SOT223
Pake / Ka :
TO-261-3
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