NTLJD3115PT1G Pricing (USD) [432588PC Stock]
- 1 pcs$0.08550
- 3,000 pcs$0.08146
- Nimewo Pati:
- NTLJD3115PT1G
- Manifakti:
- ON Semiconductor
- Detaye deskripsyon:
- MOSFET 2P-CH 20V 2.3A 6-WDFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - Zener - Single, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Single and Transistors - JFETs ...
- Avantaj konpetitif:
- We specialize in ON Semiconductor NTLJD3115PT1G electronic components. NTLJD3115PT1G can be shipped within 24 hours after order. If you have any demands for NTLJD3115PT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NTLJD3115PT1G Atribi pwodwi yo
Nimewo Pati :
NTLJD3115PT1G
Manifakti :
ON Semiconductor
Deskripsyon :
MOSFET 2P-CH 20V 2.3A 6-WDFN
Seri :
-
Estati Pati :
Active
FET Kalite :
2 P-Channel (Dual)
Karakteristik FET :
Logic Level Gate
Drenaj nan Voltage Sous (Vdss) :
20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
2.3A
RD sou (Max) @ Id, Vgs :
100 mOhm @ 2A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
6.2nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds :
531pF @ 10V
Pouvwa - Max :
710mW
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
6-WDFN Exposed Pad
Pake Aparèy Founisè :
6-WDFN (2x2)
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