IXGK120N120B3 Pricing (USD) [4214PC Stock]
- 1 pcs$10.82279
- 25 pcs$10.76895
- Nimewo Pati:
- IXGK120N120B3
- Manifakti:
- IXYS
- Detaye deskripsyon:
- IGBT 1200V 200A 830W TO264.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Single, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - RF, Transistors - Objektif espesyal, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in IXYS IXGK120N120B3 electronic components. IXGK120N120B3 can be shipped within 24 hours after order. If you have any demands for IXGK120N120B3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXGK120N120B3 Atribi pwodwi yo
Nimewo Pati :
IXGK120N120B3
Manifakti :
IXYS
Deskripsyon :
IGBT 1200V 200A 830W TO264
Seri :
GenX3™
Estati Pati :
Active
Kalite IGBT :
PT
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
200A
Kouran - Pèseptè batman (Icm) :
370A
Vce (sou) (Max) @ Vge, Ic :
3V @ 15V, 100A
Pouvwa - Max :
830W
Oblije chanje enèji :
5.5mJ (on), 5.8mJ (off)
Kalite Antre :
Standard
Gate chaje :
470nC
Td (on / off) @ 25 ° C :
36ns/275ns
Kondisyon egzamen an :
600V, 100A, 2 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
TO-264-3, TO-264AA
Pake Aparèy Founisè :
TO-264 (IXGK)
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