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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. Disrè Semiconductor Pwodwi yo
  4. Transistors - FETs, MOSFETs - Single
  5. APT66M60B2

Microsemi Corporation - APT66M60B2

KEY Part #: K6394103

APT66M60B2 Pricing (USD) [5363PC Stock]

  • 1 pcs$8.93021
  • 30 pcs$8.88578
Nimewo Pati:
APT66M60B2
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
MOSFET N-CH 600V 66A T-MAX.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Tiristors - DIACs, SIDACs, Diodes - RF, Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Diodes - Rèkteur - Arrays, Diodes - Zener - Single and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
We specialize in Microsemi Corporation APT66M60B2 electronic components. APT66M60B2 can be shipped within 24 hours after order. If you have any demands for APT66M60B2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT66M60B2 Atribi pwodwi yo

Nimewo Pati : APT66M60B2
Manifakti : Microsemi Corporation
Deskripsyon : MOSFET N-CH 600V 66A T-MAX
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 70A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 100 mOhm @ 33A, 10V
Vgs (th) (Max) @ Id : 5V @ 2.5mA
Chaje Gate (Qg) (Max) @ Vgs : 330nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 13190pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1135W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : T-MAX™ [B2]
Pake / Ka : TO-247-3 Variant

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