IRLS3813TRLPBF Pricing (USD) [62569PC Stock]
- 1 pcs$0.62493
- 800 pcs$0.59993
- Nimewo Pati:
- IRLS3813TRLPBF
- Manifakti:
- Infineon Technologies
- Detaye deskripsyon:
- MOSFET N-CH 30V 160A D2PAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Modil pouvwa chofè, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Infineon Technologies IRLS3813TRLPBF electronic components. IRLS3813TRLPBF can be shipped within 24 hours after order. If you have any demands for IRLS3813TRLPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLS3813TRLPBF Atribi pwodwi yo
Nimewo Pati :
IRLS3813TRLPBF
Manifakti :
Infineon Technologies
Deskripsyon :
MOSFET N-CH 30V 160A D2PAK
Seri :
HEXFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
160A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
1.95 mOhm @ 148A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 150µA
Chaje Gate (Qg) (Max) @ Vgs :
83nC @ 4.5V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
8020pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
195W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
D²PAK (TO-263AB)
Pake / Ka :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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