SCT10N120 Pricing (USD) [7552PC Stock]
- 1 pcs$5.23111
- 10 pcs$4.80892
- 100 pcs$4.06149
- 500 pcs$3.61299
- Nimewo Pati:
- SCT10N120
- Manifakti:
- STMicroelectronics
- Detaye deskripsyon:
- MOSFET N-CH 1.2KV TO247-3.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - DIACs, SIDACs, Transistors - IGBTs - Single, Transistors - IGBTs - Arrays, Diodes - RF, Transistors - Objektif espesyal and Transistors - Bipolè (BJT) - RF ...
- Avantaj konpetitif:
- We specialize in STMicroelectronics SCT10N120 electronic components. SCT10N120 can be shipped within 24 hours after order. If you have any demands for SCT10N120, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SCT10N120 Atribi pwodwi yo
Nimewo Pati :
SCT10N120
Manifakti :
STMicroelectronics
Deskripsyon :
MOSFET N-CH 1.2KV TO247-3
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
SiCFET (Silicon Carbide)
Drenaj nan Voltage Sous (Vdss) :
1200V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
12A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
20V
RD sou (Max) @ Id, Vgs :
690 mOhm @ 6A, 20V
Vgs (th) (Max) @ Id :
3.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
22nC @ 20V
Vgs (Max) :
+25V, -10V
Antre kapasite (Ciss) (Max) @ Vds :
290pF @ 400V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
150W (Tc)
Operating Tanperati :
-55°C ~ 200°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
HiP247™
Pake / Ka :
TO-247-3
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